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MURTA200120 - MURTA

MURTA200120

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GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

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MURTA200120 - MURTA

MURTA200120

Active
GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMURTA200120
Current - Average Rectified (Io) (per Diode)100 A
Diode Configuration1 Pair Common Cathode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 48$ 121.18

Description

General part information

MURTA200 Series

Diode Array 1 Pair Common Cathode 1200 V 100A Chassis Mount Three Tower

Documents

Technical documentation and resources