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MURTA20020 - Product Image

MURTA20020

Active
GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

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Search across all available documentation for this part.

DocumentsDatasheet
MURTA20020 - Product Image

MURTA20020

Active
GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMURTA20020
Current - Average Rectified (Io) (per Diode)100 A
Current - Reverse Leakage @ Vr25 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 48$ 121.18
LCSCPiece 1$ 142.99
192$ 57.06
504$ 55.15
1008$ 54.21

Description

General part information

MURTA200 Series

Diode Array 1 Pair Common Cathode 200 V 100A Chassis Mount Three Tower

Documents

Technical documentation and resources