
MURTA200120R
ActiveGeneSiC Semiconductor
DIODE MODULE GP 1.2KV 3TOWER
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

MURTA200120R
ActiveGeneSiC Semiconductor
DIODE MODULE GP 1.2KV 3TOWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MURTA200120R |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100 A |
| Diode Configuration | 1 Pair Common Anode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | Three Tower |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 48 | $ 121.18 | |
Description
General part information
MURTA200 Series
Diode Array 1 Pair Common Anode 1200 V 100A Chassis Mount Three Tower
Documents
Technical documentation and resources