MURTA200 Series

Catalog

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

Part	Technology	Speed	Speed	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MURTA20020	Standard	Standard Recovery >500ns	200 mA	100 A	1 Pair Common Cathode	Chassis Mount	Three Tower	Three Tower	150 °C	-55 °C	200 V	25 µA	1.3 V
GeneSiC Semiconductor MURTA20060R	Standard	Standard Recovery >500ns	200 mA	100 A	1 Pair Common Anode	Chassis Mount	Three Tower	Three Tower	150 °C	-55 °C	600 V	25 µA	1.7 V
GeneSiC Semiconductor MURTA20040R	Standard	Standard Recovery >500ns	200 mA	100 A	1 Pair Common Anode	Chassis Mount	Three Tower	Three Tower	150 °C	-55 °C	400 V	25 µA	1.3 V
GeneSiC Semiconductor MURTA200120	Standard	Standard Recovery >500ns	200 mA	100 A	1 Pair Common Cathode	Chassis Mount	Three Tower	Three Tower	150 °C	-55 °C	1.2 kV		2.6 V
GeneSiC Semiconductor MURTA200120R	Standard	Standard Recovery >500ns	200 mA	100 A	1 Pair Common Anode	Chassis Mount	Three Tower	Three Tower	150 °C	-55 °C	1.2 kV		2.6 V