
SCT3105KRC14
NRNDRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 24 A, 1.2 KV, 0.105 OHM, TO-247
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SCT3105KRC14
NRNDRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 24 A, 1.2 KV, 0.105 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3105KRC14 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 51 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 134 W |
| Rds On (Max) @ Id, Vgs | 137 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3105KRHR Series
AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources