SCT3105KRHR Series

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Qualification	Grade	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor SCT3105KW7TL	5.6 V	Surface Mount	N-Channel	137 mOhm	51 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 A	175 °C	574 pF	TO-263-7	1200 V
Rohm Semiconductor SCT3105KRHRC15	5.6 V	Through Hole	N-Channel	137 mOhm	51 nC	TO-247-4	24 A	175 °C	574 pF	TO-247-4L	1200 V	MOSFET (Metal Oxide)	AEC-Q101	Automotive	134 W	18 V
Rohm Semiconductor SCT3105KRC14	5.6 V	Through Hole	N-Channel	137 mOhm	51 nC	TO-247-4	24 A	175 °C	574 pF	TO-247-4L	1200 V				134 W	18 V

Catalog

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.