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SCT3105KRHRC15 - Product thumbnail image

SCT3105KRHRC15

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Rohm Semiconductor

1200V, 24A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsTO-247-4L_C15 Dimensions How to Use the Thermal Resistance and Thermal Characteristics Parameters +41

SCT3105KRHRC15 - Product thumbnail image

SCT3105KRHRC15

Active

Rohm Semiconductor

1200V, 24A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsTO-247-4L_C15 Dimensions How to Use the Thermal Resistance and Thermal Characteristics Parameters +41

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3105KRHRC15

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	574 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	134 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	137 mOhm
Supplier Device Package	TO-247-4L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.27
		10	$ 5.64
		100	$ 4.14
		500	$ 3.56
Newark	Each	1	$ 15.98
		10	$ 14.44
		25	$ 14.14
		50	$ 13.54
		100	$ 12.95
		250	$ 12.65
		900	$ 12.05

Description

General part information

SCT3105KRHR Series

AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Documents

Technical documentation and resources

TO-247-4L_C15 Dimensions

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

What Is Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Solving the challenges of driving SiC MOSFETs with new packaging developments

Types and Features of Transistors

Application Note

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

Two-Resistor Model for Thermal Simulation

Thermal Resistance Measurement Method for SiC MOSFET

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Method for Monitoring Switching Waveform

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

SiC MOSFET Layout Design Considerations

Technical Article

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Anti-Whisker formation

Package Information

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

How to Use PLECS Models

Technical Article

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

How to measure the oscillation occurs between parallel-connected devices

Technical Article

About Export Administration Regulations (EAR)

Export Information

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

SCT3105KRHR Data Sheet

About Flammability of Materials

Environmental Data

θ<sub>JA</sub> and Ψ<sub>JT</sub>

4 Steps for Successful Thermal Designing of Power Devices

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

PCB Layout Thermal Design Guide

Technical Data Sheet EN

Datasheet

SCT3105KRHR Series

1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Qualification	Grade	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor SCT3105KW7TL	5.6 V	Surface Mount	N-Channel	137 mOhm	51 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 A	175 °C	574 pF	TO-263-7	1200 V
Rohm Semiconductor SCT3105KRHRC15	5.6 V	Through Hole	N-Channel	137 mOhm	51 nC	TO-247-4	24 A	175 °C	574 pF	TO-247-4L	1200 V	MOSFET (Metal Oxide)	AEC-Q101	Automotive	134 W	18 V
Rohm Semiconductor SCT3105KRC14	5.6 V	Through Hole	N-Channel	137 mOhm	51 nC	TO-247-4	24 A	175 °C	574 pF	TO-247-4L	1200 V				134 W	18 V