VS-10ETS08PBF

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO220AC

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VS-10ETS08PBF

Unknown

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO220AC

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VS-10ETS08PBF

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

10ETS08 Series

Part	Speed	Speed	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case
Vishay General Semiconductor - Diodes Division VS-10ETS08STRLPBF	Standard Recovery >500ns	200 mA	Standard	TO-263AB (D2PAK)	800 V	150 °C	-40 °C	Surface Mount	1.1 V	10 A	500 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division 10ETS08FP	Standard Recovery >500ns	200 mA	Standard	TO-220AC Full Pack	800 V	150 °C	-40 °C	Through Hole	1.1 V	10 A	50 µA	TO-220-2 Full Pack
Vishay General Semiconductor - Diodes Division VS-10ETS08SPBF	Standard Recovery >500ns	200 mA	Standard	TO-263AB (D2PAK)	800 V	150 °C	-40 °C	Surface Mount	1.1 V	10 A	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-10ETS08PBF	Standard Recovery >500ns	200 mA	Standard	TO-220AC	800 V	150 °C	-40 °C	Through Hole	1.1 V	10 A	50 µA	TO-220-2
Vishay General Semiconductor - Diodes Division VS-10ETS08FP-M3	Standard Recovery >500ns	200 mA	Standard	TO-220-2 Full Pack	800 V	150 °C	-40 °C	Through Hole	1.1 V	10 A	50 µA	TO-220-2 Full Pack
Vishay General Semiconductor - Diodes Division VS-10ETS08-M3		200 mA 500 ns	Standard	TO-220AC	800 V	150 °C	-40 °C	Through Hole	1.1 V	10 A	50 µA	TO-220-2
Vishay General Semiconductor - Diodes Division VS-10ETS08STRR-M3		200 mA 500 ns	Standard	TO-263AB (D2PAK)	800 V	150 °C	-40 °C	Surface Mount	1.1 V	10 A	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

10ETS08 Series

Diode 800 V 10A Through Hole TO-220AC

Documents

Technical documentation and resources

No documents available