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VS-10ETS08STRR-M3 - MBRB15H50CT-E3/81

VS-10ETS08STRR-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO263AB

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DocumentsDatasheet
VS-10ETS08STRR-M3 - MBRB15H50CT-E3/81

VS-10ETS08STRR-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-10ETS08STRR-M3
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed200 mA, 500 ns
Supplier Device PackageTO-263AB (D2PAK)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.50
10$ 1.25
100$ 0.99
Digi-Reel® 1$ 1.50
10$ 1.25
100$ 0.99
Tape & Reel (TR) 800$ 0.63

Description

General part information

10ETS08 Series

Diode 800 V 10A Surface Mount TO-263AB (D2PAK)

Documents

Technical documentation and resources