DIODE GEN PURP 800V 10A TO263AB
| Part | Speed | Speed | Technology | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Standard Recovery >500ns | 200 mA | Standard | TO-263AB (D2PAK) | 800 V | 150 °C | -40 °C | Surface Mount | 1.1 V | 10 A | 500 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
Vishay General Semiconductor - Diodes Division | Standard Recovery >500ns | 200 mA | Standard | TO-220AC Full Pack | 800 V | 150 °C | -40 °C | Through Hole | 1.1 V | 10 A | 50 µA | TO-220-2 Full Pack |
Vishay General Semiconductor - Diodes Division | Standard Recovery >500ns | 200 mA | Standard | TO-263AB (D2PAK) | 800 V | 150 °C | -40 °C | Surface Mount | 1.1 V | 10 A | 50 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
Vishay General Semiconductor - Diodes Division | Standard Recovery >500ns | 200 mA | Standard | TO-220AC | 800 V | 150 °C | -40 °C | Through Hole | 1.1 V | 10 A | 50 µA | TO-220-2 |
Vishay General Semiconductor - Diodes Division | Standard Recovery >500ns | 200 mA | Standard | TO-220-2 Full Pack | 800 V | 150 °C | -40 °C | Through Hole | 1.1 V | 10 A | 50 µA | TO-220-2 Full Pack |
Vishay General Semiconductor - Diodes Division | 200 mA 500 ns | Standard | TO-220AC | 800 V | 150 °C | -40 °C | Through Hole | 1.1 V | 10 A | 50 µA | TO-220-2 | |
Vishay General Semiconductor - Diodes Division | 200 mA 500 ns | Standard | TO-263AB (D2PAK) | 800 V | 150 °C | -40 °C | Surface Mount | 1.1 V | 10 A | 50 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |