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VS-10ETS08-M3 - TO-220AC

VS-10ETS08-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO220AC

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VS-10ETS08-M3 - TO-220AC

VS-10ETS08-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 10A TO220AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-10ETS08-M3
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-2
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.01
50$ 1.62
100$ 1.33
500$ 1.12
1000$ 0.95
2000$ 0.91
5000$ 0.87
10000$ 0.84

Description

General part information

10ETS08 Series

Diode 800 V 10A Through Hole TO-220AC

Documents

Technical documentation and resources

No documents available