
VS-10ETS08-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A TO220AC
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VS-10ETS08-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-10ETS08-M3 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.01 | |
| 50 | $ 1.62 | |||
| 100 | $ 1.33 | |||
| 500 | $ 1.12 | |||
| 1000 | $ 0.95 | |||
| 2000 | $ 0.91 | |||
| 5000 | $ 0.87 | |||
| 10000 | $ 0.84 | |||
Description
General part information
10ETS08 Series
Diode 800 V 10A Through Hole TO-220AC
Documents
Technical documentation and resources
No documents available