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MSRT20060A - Three Tower

MSRT20060A

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GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

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MSRT20060A - Three Tower

MSRT20060A

Active
GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMSRT20060A
Current - Average Rectified (Io) (per Diode)200 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseThree Tower
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 25$ 45.69

Description

General part information

MSRT200 Series

Diode Array 1 Pair Common Cathode 600 V 200A (DC) Chassis Mount Three Tower

Documents

Technical documentation and resources