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MSRT200100AD - Three Tower

MSRT200100AD

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GeneSiC Semiconductor

DIODE MOD GP 1000V 200A 3TOWER

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MSRT200100AD - Three Tower

MSRT200100AD

Active
GeneSiC Semiconductor

DIODE MOD GP 1000V 200A 3TOWER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMSRT200100AD
Current - Average Rectified (Io) (per Diode)200 A
Current - Reverse Leakage @ Vr10 çA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 25$ 67.07

Description

General part information

MSRT200 Series

Diode Array 1 Pair Series Connection 1000 V 200A Chassis Mount Three Tower

Documents

Technical documentation and resources