MSRT200160D
ActiveGeneSiC Semiconductor
DIODE MODULE GP 1.6KV 3TOWER
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MSRT200160D
ActiveGeneSiC Semiconductor
DIODE MODULE GP 1.6KV 3TOWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MSRT200160D |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Diode Configuration | 1 Pair Series Connection |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | Three Tower |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 80 | $ 94.89 | |
Description
General part information
MSRT200 Series
Diode Array 1 Pair Series Connection 1600 V 200A Chassis Mount Three Tower
Documents
Technical documentation and resources