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MSRT200160D

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GeneSiC Semiconductor

DIODE MODULE GP 1.6KV 3TOWER

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MSRT200160D

Active
GeneSiC Semiconductor

DIODE MODULE GP 1.6KV 3TOWER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMSRT200160D
Current - Average Rectified (Io) (per Diode)200 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 80$ 94.89

Description

General part information

MSRT200 Series

Diode Array 1 Pair Series Connection 1600 V 200A Chassis Mount Three Tower

Documents

Technical documentation and resources