MSRT200 Series

Catalog

DIODE MODULE GP 1.2KV 3TOWER

Part	Speed	Speed	Mounting Type	Supplier Device Package	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Diode Configuration	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor MSRT200120A	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-40 °C	175 ░C	1.2 kV	1.2 V	Three Tower	1 Pair Common Cathode	10 µA	200 A
GeneSiC Semiconductor MSRT200160D	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-55 °C	150 °C		1.1 V	Three Tower	1 Pair Series Connection	10 µA	200 A
GeneSiC Semiconductor MSRT20060A	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-40 °C	175 ░C	600 V	1.2 V	Three Tower	1 Pair Common Cathode	10 µA	200 A
GeneSiC Semiconductor MSRT200140AD	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-55 °C	150 °C	1400 V	1.1 V	Three Tower	1 Pair Series Connection	10 µA	200 A
GeneSiC Semiconductor MSRT200140A	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-40 °C	175 ░C	1400 V	1.2 V	Three Tower	1 Pair Common Cathode	10 µA	200 A
GeneSiC Semiconductor MSRT200100AD	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	Standard	-55 °C	150 °C	1000 V	1.1 V	Three Tower	1 Pair Series Connection	10 çA	200 A