SCS240KE2HRC11

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Rohm Semiconductor

DIODE ARR SIC SCHOT 1200V TO247

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Rohm Semiconductor

DIODE ARR SIC SCHOT 1200V TO247

Technical Specifications

Parameters and characteristics for this part

Specification	SCS240KE2HRC11

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	400 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

1200V, 40A, 3-pin THD, Silicon-carbide (SiC) SBD

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Diode Configuration	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction	Qualification	Grade
Rohm Semiconductor SCS240KE2HRC11	Through Hole	1.6 V	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247	0 ns	1.2 kV	No Recovery Time	20 A	TO-247-3	400 µA	175 °C
Rohm Semiconductor SCS240KE2GC11	Through Hole	1.6 V	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247N	0 ns	1.2 kV	No Recovery Time	20 A	TO-247-3	400 µA		175 °C
Rohm Semiconductor SCS240AE2GC11	Through Hole	1.55 V	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247N	0 ns	650 V	No Recovery Time	20 A	TO-247-3	400 µA		175 °C
Rohm Semiconductor SCS240AE2HRC	Through Hole	1.55 V	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247		650 V	No Recovery Time	15 A	TO-247-3	300 µA	175 °C		AEC-Q101	Automotive
Rohm Semiconductor SCS240KE2C	Through Hole		SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247	0 ns	1.2 kV	No Recovery Time	20 A	TO-247-3	400 µA	175 °C

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General part information

Switching loss reduced, enabling high-speed switching . (3-pin package)

Technical documentation and resources

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