Catalog
1200V, 40A, 3-pin THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (3-pin package)
Beta
⌘K
1200V, 40A, 3-pin THD, Silicon-carbide (SiC) SBD
1200V, 40A, 3-pin THD, Silicon-carbide (SiC) SBD
| Part | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Diode Configuration | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) (per Diode) | Package / Case | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | Through Hole | 1.6 V | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | TO-247 | 0 ns | 1.2 kV | No Recovery Time | 20 A | TO-247-3 | 400 µA | 175 °C | |||
Rohm Semiconductor | Through Hole | 1.6 V | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | TO-247N | 0 ns | 1.2 kV | No Recovery Time | 20 A | TO-247-3 | 400 µA | 175 °C | |||
Rohm Semiconductor | Through Hole | 1.55 V | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | TO-247N | 0 ns | 650 V | No Recovery Time | 20 A | TO-247-3 | 400 µA | 175 °C | |||
Rohm Semiconductor | Through Hole | 1.55 V | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | TO-247 | 650 V | No Recovery Time | 15 A | TO-247-3 | 300 µA | 175 °C | AEC-Q101 | Automotive | ||
Rohm Semiconductor | Through Hole | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | TO-247 | 0 ns | 1.2 kV | No Recovery Time | 20 A | TO-247-3 | 400 µA | 175 °C |