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Rohm Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Tolerance | Height - Seated (Max) [Max] [z] | Height - Seated (Max) [Max] [z] | Power (Watts) | Power (Watts) | Composition | Features | Resistance | Operating Temperature [Max] | Operating Temperature [Min] | Ratings | Temperature Coefficient | Package / Case | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [x] | Size / Dimension [y] | Number of Terminations | Height - Seated (Max) [Max] | Height - Seated (Max) [Max] | Supplier Device Package | Package / Case | Output | Reset | Number of Voltages Monitored | Voltage - Threshold | Type | Mounting Type | Package / Case | Current - Output | Frequency - Switching | Voltage - Output | Main Purpose | Outputs and Type | Outputs and Type | Utilized IC / Part | Voltage - Input [Max] | Voltage - Input [Min] | Board Type | Supplied Contents | Regulator Topology | Power (Watts) |
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Rohm Semiconductor | 5 % | 0.022 in | 0.55 mm | 0.25 W | 250 mW | Thick Film | Automotive AEC-Q200 Pulse Withstanding | 910 kOhms | 155 °C | -55 °C | AEC-Q200 | 200 ppm/°C | 0603 (1608 Metric) | 0.8 mm | 0.063 in | 1.6 mm | 0.031 in | 2 | ||||||||||||||||||||||||
Rohm Semiconductor | 1 % | 0.4 W | 0.4 W | Thick Film | Automotive AEC-Q200 Pulse Withstanding | 4.12 kOhms | 155 °C | -55 °C | AEC-Q200 | 100 ppm/°C | 0805 | 1.25 mm | 0.079 in | 2 mm | 0.049 in | 2 | 0.026 in | 0.65 mm | 0805 | |||||||||||||||||||||||
Rohm Semiconductor | 1 % | 0.5 W | 0.5 W | Thick Film | Automotive AEC-Q200 | 270 mOhms | 155 °C | -55 °C | AEC-Q200 | 200 ppm/°C | 1210 | 2.5 mm | 0.126 in | 3.2 mm | 0.098 in | 2 | 0.028 in | 0.7 mm | 1210 | 3225 Metric | ||||||||||||||||||||||
Rohm Semiconductor | 1 % | 0.5 W | 0.5 W | Thick Film | Automotive AEC-Q200 Pulse Withstanding | 4.32 Ohms | 155 °C | -55 °C | AEC-Q200 | 100 ppm/°C | 0805 | 1.25 mm | 0.079 in | 2 mm | 0.049 in | 2 | 0.026 in | 0.65 mm | 0805 | |||||||||||||||||||||||
Rohm Semiconductor | 1 % | 0.022 in | 0.55 mm | 0.25 W | 250 mW | Thick Film | Automotive AEC-Q200 Pulse Withstanding | 240 kOhms | 155 °C | -55 °C | AEC-Q200 | 100 ppm/°C | 0603 (1608 Metric) | 0.8 mm | 0.063 in | 1.6 mm | 0.031 in | 2 | ||||||||||||||||||||||||
Rohm Semiconductor | 105 °C | -40 °C | SOT-665 | 5-VSOF | Open Drain or Open Collector | Active Low | 1 | 3.9 V | Voltage Detector | Surface Mount | ||||||||||||||||||||||||||||||||
Rohm Semiconductor | 5 % | 3 W | Thick Film | Automotive AEC-Q200 Current Sense | 390 mOhms | 155 °C | -55 °C | AEC-Q200 | 200 ppm/°C | Wide 2512 (6432 Metric) | 6.4 mm | 0.126 in | 3.2 mm | 0.252 in | 2 | 0.028 in | 0.7 mm | 1225 | 1225 | |||||||||||||||||||||||
Rohm Semiconductor | 5 % | 0.25 W | 250 mW | Thick Film | Automotive AEC-Q200 Pulse Withstanding | 5.6 kOhms | 155 °C | -55 °C | AEC-Q200 | 200 ppm/°C | 0508 Wide 0805 (2012 Metric) | 2 mm | 0.047 in | 1.2 mm | 0.079 in | 2 | 0.026 in | 0.65 mm | 0805 | |||||||||||||||||||||||
Rohm Semiconductor | 8 A | 300 kHz | 1 V | DC/DC Step Down | Non-Isolated | 1 | BD9F800 | 28 V | 4.5 V | Fully Populated | Board(s) | Buck | ||||||||||||||||||||||||||||||
Rohm Semiconductor | 1 % | 0.125 W | Thick Film | Automotive AEC-Q200 High Voltage | 2 kOhms | 155 °C | -55 °C | AEC-Q200 | 100 ppm/°C | 0805 | 1.25 mm | 0.079 in | 2 mm | 0.049 in | 2 | 0.026 in | 0.65 mm | 0805 | 0.125 W |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
Rohm SemiconductorRGW60TS65EHRHigh-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive | Single IGBTs | 5 | 1 | The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS. |
Rohm SemiconductorRGW80TS65High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT | Discrete Semiconductor Products | 1 | 1 | RGW80TS65 is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. |
Rohm SemiconductorRGW80TS65DHRHigh-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive | Transistors | 4 | 1 | The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS. |
Rohm SemiconductorRGWX5TS65DHigh-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT | IGBTs | 1 | 1 | RGWX5TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. The RGW series features high-speed switching, contributing to higher efficiency of applications. |
Rohm SemiconductorRGWX5TS65EHRHigh-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive | Single IGBTs | 5 | 1 | RGWX5TS65EHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications. |
| Discrete Semiconductor Products | 1 | 1 | RH6E040BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching, motor drives and DC/DC converter. | |
| Discrete Semiconductor Products | 1 | 1 | RH6P040BH is a power MOSFET with low on - resistance, suitable for switching. | |
| Discrete Semiconductor Products | 2 | 1 | MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. | |
Rohm SemiconductorRHU003 | Discrete Semiconductor Products | 1 | 4 | |
Rohm SemiconductorRJ1L12 | Transistors | 2 | 4 | |