E
EIC Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
EIC SemiconductorP4KE30 | Circuit Protection | 1 | 1 | |
| Part | Mounting Type | Capacitance @ Vr, F | Current - Average Rectified (Io) | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Package / Case | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Voltage - Forward (Vf) (Max) @ If | Diode Type | Voltage - Peak Reverse (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Tolerance | Impedance (Max) (Zzt) | Power - Max [Max] | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) [Max] | Supplier Device Package | Speed | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EIC Semiconductor | Through Hole | 60 pF | 3 A | DO-201AD | 200 mA 500 ns | 600 V | 10 µA | DO-201AD Axial | 250 ns | 150 °C | -65 C | Standard | 1.3 V | ||||||||||||
EIC Semiconductor | Through Hole | 8 A | BR-10 | 10 µA | 4-Square BR-10 | Standard | 1.3 V | Single Phase | 400 V | 150 °C | -50 °C | ||||||||||||||
EIC Semiconductor | Through Hole | DO-41 | 5 µA | Axial DO-204AL DO-41 | 1.2 V | 175 ░C | -55 °C | 5 % | 9 Ohms | 1 W | 12 V | ||||||||||||||
EIC Semiconductor | Through Hole | 10 A | RBV-25 | 10 µA | 4-SIP RBV-25 | Standard | 1 V | Single Phase | 400 V | 150 °C | -40 °C | ||||||||||||||
EIC Semiconductor | Surface Mount | DO-214AA | 1 µA | DO-214AA SMB | 1.2 V | 150 °C | -55 °C | 5 % | 5 W | 15 V | 2.5 Ohms | SMB | |||||||||||||
EIC Semiconductor | Through Hole | 15 pF | 1.5 A | DO-41 | 200 mA | 50 V | 5 µA | Axial DO-204AL DO-41 | 175 ░C | -65 C | Standard | 1.1 V | Standard Recovery >500ns | ||||||||||||
EIC Semiconductor | Through Hole | 1.5 A | WOB | 10 µA | 4-Circular WOB | Standard | 1 V | Single Phase | 400 V | 150 °C | -50 °C | ||||||||||||||
EIC Semiconductor | Through Hole | DO-35 | 75 µA | Axial DO-204AH DO-35 | 1.1 V | 5 % | 500 mW | 2.7 V | 30 Ohms | 175 °C | |||||||||||||||
EIC Semiconductor | Through Hole | 60 pF | 3 A | DO-201AD | 200 mA 500 ns | 800 V | 10 µA | DO-201AD Axial | 250 ns | 150 °C | -65 C | Standard | 1.25 V | ||||||||||||
EIC Semiconductor | Through Hole | DO-41 | 10 µA | Axial DO-204AL DO-41 | 1.2 V | 175 ░C | -55 °C | 10 % | 1 W | 8.2 V | 4.5 Ohms |