FR305T/R
ActiveEIC Semiconductor
DIODE GEN PURP 600V 3A DO201AD
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FR305T/R
ActiveEIC Semiconductor
DIODE GEN PURP 600V 3A DO201AD
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | FR305T/R |
|---|---|
| Capacitance @ Vr, F | 60 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Reverse Recovery Time (trr) | 250 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1250 | $ 0.14 | |
Description
General part information
FR305T/R
Diode 600 V 3A Through Hole DO-201AD
Documents
Technical documentation and resources