1N5391T/R
ActiveEIC Semiconductor
DIODE GEN PURP 50V 1.5A DO41
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1N5391T/R
ActiveEIC Semiconductor
DIODE GEN PURP 50V 1.5A DO41
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5391T/R |
|---|---|
| Capacitance @ Vr, F | 15 pF |
| Current - Average Rectified (Io) | 1.5 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-204AL, DO-41, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-41 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 5000 | $ 0.04 | |
Description
General part information
1N5391T/R
Diode 50 V 1.5A Through Hole DO-41
Documents
Technical documentation and resources