1N5223BT/R
ActiveEIC Semiconductor
DIODE ZENER 2.7V 500MW DO35
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1N5223BT/R
ActiveEIC Semiconductor
DIODE ZENER 2.7V 500MW DO35
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5223BT/R |
|---|---|
| Current - Reverse Leakage @ Vr | 75 µA |
| Impedance (Max) (Zzt) [Max] | 30 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | Axial, DO-35, DO-204AH |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | DO-35 |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
| Voltage - Zener (Nom) (Vz) | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.04 | |
Description
General part information
1N5223BT/R
Zener Diode 2.7 V 500 mW ±5% Through Hole DO-35
Documents
Technical documentation and resources