Cambridge GaN Devices

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Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
Cambridge GaN Devices CGD65A055S2-T07	20 V	-1 V	27 A	4.2 V	650 V	Current Sensing	77 mOhm	16-DFN (8x8)	Surface Mount	6 nC	-55 °C	150 °C	12 V 12 V	GaNFET (Gallium Nitride)	16-PowerVDFN
Cambridge GaN Devices CGD65B200S2-T13	20 V	-1 V	8.5 A	4.2 V	650 V	Current Sensing	280 mOhm	8-DFN (5x6)	Surface Mount		-55 °C	150 °C		GaNFET (Gallium Nitride)	8-PowerVDFN	9 V	20 V	1.4 nC
Cambridge GaN Devices CGD65B130S2-T13	20 V	-1 V	12 A	4.2 V	650 V	Current Sensing		8-DFN (5x6)	Surface Mount	2.3 nC	-55 °C	150 °C		GaNFET (Gallium Nitride)	8-PowerVDFN	9 V	20 V
Cambridge GaN Devices CGD65A130S2-T13	20 V	-1 V	12 A	4.2 V	650 V	Current Sensing		16-DFN (8x8)	Surface Mount	2.3 nC	-55 °C	150 °C	12 V 12 V	GaNFET (Gallium Nitride)	16-PowerVDFN