CGD65B200S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 200MOHM, DFN5X6.
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CGD65B200S2-T13
ActiveCambridge GaN Devices
650V GAN HEMT, 200MOHM, DFN5X6.
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65B200S2-T13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 9 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 20 V |
| FET Feature | Current Sensing |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.4 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Rds On (Max) @ Id, Vgs | 280 mOhm |
| Supplier Device Package | 8-DFN (5x6) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -1 V |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.55 | |
| 10 | $ 3.82 | |||
| 100 | $ 3.09 | |||
| 500 | $ 2.75 | |||
| 1000 | $ 2.35 | |||
| 2000 | $ 2.21 | |||
| Digi-Reel® | 1 | $ 4.55 | ||
| 10 | $ 3.82 | |||
| 100 | $ 3.09 | |||
| 500 | $ 2.75 | |||
| 1000 | $ 2.35 | |||
| 2000 | $ 2.21 | |||
| Tape & Reel (TR) | 5000 | $ 2.13 | ||
Description
General part information
CGD65B200S2-T13
650 V 8.5A (Tc) Surface Mount 8-DFN (5x6)
Documents
Technical documentation and resources