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CGD65B130S2-T13 - CGD65B130S2-T13

CGD65B130S2-T13

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Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN5X6.

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CGD65B130S2-T13 - CGD65B130S2-T13

CGD65B130S2-T13

Active
Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN5X6.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationCGD65B130S2-T13
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]9 V
Drive Voltage (Max Rds On, Min Rds On) [Min]20 V
FET FeatureCurrent Sensing
Gate Charge (Qg) (Max) @ Vgs2.3 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Supplier Device Package8-DFN (5x6)
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-1 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.42
10$ 5.39
100$ 4.36
500$ 3.88
1000$ 3.32
2000$ 3.13
Digi-Reel® 1$ 6.42
10$ 5.39
100$ 4.36
500$ 3.88
1000$ 3.32
2000$ 3.13
Tape & Reel (TR) 5000$ 3.00

Description

General part information

CGD65B130S2-T13

650 V 12A (Tc) Surface Mount 8-DFN (5x6)

Documents

Technical documentation and resources