Zenode.ai Logo
Beta
K
CGD65A130S2-T13 - CGD65A130S2-T13

CGD65A130S2-T13

Active
Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN8X8.

Deep-Dive with AI

Search across all available documentation for this part.

CGD65A130S2-T13 - CGD65A130S2-T13

CGD65A130S2-T13

Active
Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN8X8.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCGD65A130S2-T13
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)12 V, 12 V
FET FeatureCurrent Sensing
Gate Charge (Qg) (Max) @ Vgs2.3 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case16-PowerVDFN
Supplier Device Package16-DFN (8x8)
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-1 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.25
10$ 5.36
100$ 4.46
500$ 3.94
1000$ 3.55
Digi-Reel® 1$ 6.25
10$ 5.36
100$ 4.46
500$ 3.94
1000$ 3.55
Tape & Reel (TR) 3500$ 3.32

Description

General part information

CGD65A130S2-T13

650 V 12A (Tc) Surface Mount 16-DFN (8x8)

Documents

Technical documentation and resources

No documents available