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CGD65A055S2-T07 - CGD65A055S2-T07

CGD65A055S2-T07

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Cambridge GaN Devices

650V GAN HEMT, 55MOHM, DFN8X8. W

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CGD65A055S2-T07 - CGD65A055S2-T07

CGD65A055S2-T07

Active
Cambridge GaN Devices

650V GAN HEMT, 55MOHM, DFN8X8. W

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationCGD65A055S2-T07
Current - Continuous Drain (Id) @ 25°C27 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)12 V, 12 V
FET FeatureCurrent Sensing
Gate Charge (Qg) (Max) @ Vgs6 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case16-PowerVDFN
Rds On (Max) @ Id, Vgs77 mOhm
Supplier Device Package16-DFN (8x8)
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-1 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 15.06
10$ 13.27
100$ 11.47
500$ 10.40
Digi-Reel® 1$ 15.06
10$ 13.27
100$ 11.47
500$ 10.40
Tape & Reel (TR) 1000$ 9.54

Description

General part information

CGD65A055S2-T07

650 V 27A (Tc) Surface Mount 16-DFN (8x8)

Documents

Technical documentation and resources