MURTA40060

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MURTA40060

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Diode Configuration	Speed	Speed	Mounting Type	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor MURTA40040R	1 Pair Common Anode	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	25 µA	1.3 V	400 V	Standard	200 A	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MURTA40040	1 Pair Common Cathode	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	25 µA	1.3 V	400 V	Standard	200 A	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MURTA40060	1 Pair Common Cathode	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	25 µA	1.7 V	600 V	Standard	200 A	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MURTA40060R	1 Pair Common Anode	Standard Recovery >500ns	200 mA	Chassis Mount	Three Tower	25 µA	1.7 V	600 V	Standard	200 A	Three Tower	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 600 V 200A Chassis Mount Three Tower

Technical documentation and resources