DIODE MODULE GP 400V 200A 3TOWER
| Part | Diode Configuration | Speed | Speed | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Anode | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 25 µA | 1.3 V | 400 V | Standard | 200 A | Three Tower | 150 °C | -55 °C |
GeneSiC Semiconductor | 1 Pair Common Cathode | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 25 µA | 1.3 V | 400 V | Standard | 200 A | Three Tower | 150 °C | -55 °C |
GeneSiC Semiconductor | 1 Pair Common Cathode | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 25 µA | 1.7 V | 600 V | Standard | 200 A | Three Tower | 150 °C | -55 °C |
GeneSiC Semiconductor | 1 Pair Common Anode | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 25 µA | 1.7 V | 600 V | Standard | 200 A | Three Tower | 150 °C | -55 °C |