
IS61WV6416DBLL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
1MB,HIGH-SPEED/LOW POWER,ASYNC,64K X 16,8NS/3.3V OR 10NS/2.5V-3.6V,44 PIN TSOP II, ROHS
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IS61WV6416DBLL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
1MB,HIGH-SPEED/LOW POWER,ASYNC,64K X 16,8NS/3.3V OR 10NS/2.5V-3.6V,44 PIN TSOP II, ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV6416DBLL-10TLI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 64 K |
| Memory Organization [custom] | 16 bits |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.4 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS61WV6416 Series
High SpeedHigh-speed access time: 8, 10, 12, 20 nsLow Active Power: 135 mW (typical)Low Standby Power: 12 µW (typical) CMOS standby
High-speed access time: 8, 10, 12, 20 ns
Low Active Power: 135 mW (typical)
Documents
Technical documentation and resources
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