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IS61WV6416DBLL-10TLI - 44-TSOP

IS61WV6416DBLL-10TLI

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ISSI, Integrated Silicon Solution Inc

1MB,HIGH-SPEED/LOW POWER,ASYNC,64K X 16,8NS/3.3V OR 10NS/2.5V-3.6V,44 PIN TSOP II, ROHS

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IS61WV6416DBLL-10TLI - 44-TSOP

IS61WV6416DBLL-10TLI

Active
ISSI, Integrated Silicon Solution Inc

1MB,HIGH-SPEED/LOW POWER,ASYNC,64K X 16,8NS/3.3V OR 10NS/2.5V-3.6V,44 PIN TSOP II, ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIS61WV6416DBLL-10TLI
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]64 K
Memory Organization [custom]16 bits
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case10.16 mm
Package / Case10.16 mm
Package / Case44-TSOP
Supplier Device Package44-TSOP II
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.4 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 2.36
10$ 2.12
25$ 2.09
40$ 2.08
135$ 1.86
270$ 1.80
540$ 1.79
945$ 1.67
4995$ 1.51
NewarkEach 100$ 2.07
250$ 1.73
500$ 1.68

Description

General part information

IS61WV6416 Series

High SpeedHigh-speed access time: 8, 10, 12, 20 nsLow Active Power: 135 mW (typical)Low Standby Power: 12 µW (typical) CMOS standby

High-speed access time: 8, 10, 12, 20 ns

Low Active Power: 135 mW (typical)

Documents

Technical documentation and resources

No documents available