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IS61WV6416EEBLL-10BLI - 48TFBGA

IS61WV6416EEBLL-10BLI

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ISSI, Integrated Silicon Solution Inc

1MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,64K X 16,2.4V-3.6V (10NS), 48 BALL MBGA (6X8 MM), ROHS

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IS61WV6416EEBLL-10BLI - 48TFBGA

IS61WV6416EEBLL-10BLI

Active
ISSI, Integrated Silicon Solution Inc

1MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,64K X 16,2.4V-3.6V (10NS), 48 BALL MBGA (6X8 MM), ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIS61WV6416EEBLL-10BLI
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]64 K
Memory Organization [custom]16 bits
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.4 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 960$ 1.59
NewarkEach 250$ 1.88
500$ 1.83

Description

General part information

IS61WV6416 Series

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-TFBGA (6x8)

Documents

Technical documentation and resources

No documents available