
IS61WV6416EEBLL-10BLI
ActiveISSI, Integrated Silicon Solution Inc
1MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,64K X 16,2.4V-3.6V (10NS), 48 BALL MBGA (6X8 MM), ROHS
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IS61WV6416EEBLL-10BLI
ActiveISSI, Integrated Silicon Solution Inc
1MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,64K X 16,2.4V-3.6V (10NS), 48 BALL MBGA (6X8 MM), ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV6416EEBLL-10BLI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 64 K |
| Memory Organization [custom] | 16 bits |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.4 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS61WV6416 Series
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-TFBGA (6x8)
Documents
Technical documentation and resources
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