
IS61WV6416EEBLL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
IC SRAM 1MBIT PARALLEL 44TSOP II
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IS61WV6416EEBLL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
IC SRAM 1MBIT PARALLEL 44TSOP II
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV6416EEBLL-10TLI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 64 K |
| Memory Organization [custom] | 16 bits |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.4 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 540 | $ 1.68 | |
Description
General part information
IS61WV6416 Series
High-speed access time: 8, 10 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) CMOS standby
Documents
Technical documentation and resources
No documents available