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71V416S10BEG - 71V416 - Block Diagram

71V416S10BEG

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Renesas Electronics Corporation

3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT

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71V416S10BEG - 71V416 - Block Diagram

71V416S10BEG

Active
Renesas Electronics Corporation

3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V416S10BEG
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256 K
Memory Size512 kb
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case48-TFBGA
Supplier Device Package48-CABGA (9x9)
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]3 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 9.42
10$ 8.73
25$ 8.53
40$ 8.48
80$ 7.47
250$ 7.10
500$ 7.03
1000$ 6.79

Description

General part information

71V416S Series

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Documents

Technical documentation and resources