
71V416L10PHGI
ActiveRenesas Electronics Corporation
3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT
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71V416L10PHGI
ActiveRenesas Electronics Corporation
3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V416L10PHGI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
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Description
General part information
71V416S Series
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Documents
Technical documentation and resources