71V416L12BE

Obsolete

Renesas Electronics Corporation

3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT

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Documents71V416S_L Datasheet

71V416L12BE

Obsolete

Renesas Electronics Corporation

3.3V 256K X 16 ASYNCHRONOUS STATIC RAM CENTER PWR & GND PINOUT

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Documents71V416S_L Datasheet

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Technical Specifications

Parameters and characteristics for this part

Specification	71V416L12BE

Access Time	12 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	256 K
Memory Size	512 kb
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	48-TFBGA
Supplier Device Package	48-CABGA (9x9)
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page	12 ns

71V416S Series

3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout

Part	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Technology	Package / Case	Package / Case	Package / Case	Memory Type	Memory Size	Memory Format	Memory Organization	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Interface	Package / Case	Supplier Device Package
Renesas Electronics Corporation 71V416S15YG	15 ns	70 °C	0 °C	15 ns	SRAM - Asynchronous	10.16 mm	44-BSOJ	10.16 mm	Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel
Renesas Electronics Corporation 71V416L12YGI8	12 ns	85 °C	-40 °C	12 ns	SRAM - Asynchronous	10.16 mm	44-BSOJ	10.16 mm	Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel
Renesas Electronics Corporation 71V416L10PHGI	10 ns	85 °C	-40 °C	10 ns	SRAM - Asynchronous	10.16 mm	44-TSOP		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel	10.16 mm	44-TSOP II
Renesas Electronics Corporation 71V416L12BE	12 ns	70 °C	0 °C	12 ns	SRAM - Asynchronous		48-TFBGA		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel		48-CABGA (9x9)
Renesas Electronics Corporation 71V416S10PHG	10 ns	70 °C	0 °C	10 ns	SRAM - Asynchronous	10.16 mm	44-TSOP		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel	10.16 mm	44-TSOP II
Renesas Electronics Corporation 71V416L15BE	15 ns	70 °C	0 °C	15 ns	SRAM - Asynchronous		48-TFBGA		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel		48-CABGA (9x9)
Renesas Electronics Corporation 71V416S12BEG8	12 ns	70 °C	0 °C	12 ns	SRAM - Asynchronous		48-TFBGA		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel		48-CABGA (9x9)
Renesas Electronics Corporation 71V416L12BEI	12 ns	85 °C	-40 °C	12 ns	SRAM - Asynchronous		48-TFBGA		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel		48-CABGA (9x9)
Renesas Electronics Corporation 71V416S10BEG	10 ns	70 °C	0 °C	10 ns	SRAM - Asynchronous		48-TFBGA		Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel		48-CABGA (9x9)
Renesas Electronics Corporation 71V416L12YG	12 ns	70 °C	0 °C	12 ns	SRAM - Asynchronous	10.16 mm	44-BSOJ	10.16 mm	Volatile	512 kb	SRAM	256 K	Surface Mount	3.6 V	3 V	Parallel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V416S Series

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Documents

Technical documentation and resources

71V416S_L

Datasheet