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TIP29B - TO-220-3

TIP29B

Obsolete
ON Semiconductor

1.0 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

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TIP29B - TO-220-3

TIP29B

Obsolete
ON Semiconductor

1.0 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP29B
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TIP29C Series

The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C (NPN); and TIP30, A, B, C (PNP) are complementary devices.