
TIP29C
ObsoleteON Semiconductor
TRANS GP BJT NPN 100V 1A 2000MW 3-PIN(3+TAB) TO-220 BAG
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TIP29C
ObsoleteON Semiconductor
TRANS GP BJT NPN 100V 1A 2000MW 3-PIN(3+TAB) TO-220 BAG
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP29C |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
TIP29C Series
The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C (NPN); and TIP30, A, B, C (PNP) are complementary devices.
Documents
Technical documentation and resources