TIP29C Series

1.0 A, 100 V NPN Power Bipolar Junction Transistor

Catalog

1.0 A, 100 V NPN Power Bipolar Junction Transistor

Part	Operating Temperature	Package / Case	Transistor Type	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor TIP29CTSTU	150 °C	TO-220-3	NPN	2 W	Through Hole	1 A	15	300 µA	700 mV	100 V	3 MHz	TO-220-3
ON Semiconductor TIP29CG		TO-220-3	NPN	2 W	Through Hole	1 A	15	300 µA	700 mV	100 V	3 MHz	TO-220	150 °C	-65 °C
ON Semiconductor TIP29B		TO-220-3	NPN	2 W	Through Hole	1 A	15	300 µA	700 mV	80 V	3 MHz	TO-220	150 °C	-65 °C
ON Semiconductor TIP29ATU	150 °C	TO-220-3	NPN	2 W	Through Hole	1 A	15	300 µA	700 mV		3 MHz	TO-220-3			60 V
ON Semiconductor TIP29C		TO-220-3	NPN	2 W	Through Hole	1 A	15	300 µA	700 mV	100 V	3 MHz	TO-220	150 °C	-65 °C

Catalog

1.0 A, 100 V NPN Power Bipolar Junction Transistor

Key Features

• These Devices are Pb-Free and are RoHS Compliant

Description

The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C (NPN); and TIP30, A, B, C (PNP) are complementary devices.