SCT3030KLGC11

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 72 A, 1.2 KV, 0.03 OHM, TO-247N

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DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Basics and Design Guidelines for Gate Drive Circuits +48

SCT3030KLGC11

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 72 A, 1.2 KV, 0.03 OHM, TO-247N

Deep-Dive with AI

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Basics and Design Guidelines for Gate Drive Circuits +48

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3030KLGC11

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	131 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2222 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	339 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6 V

SCT3030KLHR Series

1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Qualification	Technology
Rohm Semiconductor SCT3030ALGC11	262 W	TO-247N	TO-247-3	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V
Rohm Semiconductor SCT3030AW7TL		TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 nC	5.6 V	70 A	1526 pF	Surface Mount	39 mOhm	N-Channel		175 °C	650 V	267 W
Rohm Semiconductor SCT3030KLGC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF
Rohm Semiconductor SCT3030KLHRC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF	Automotive	AEC-Q101
Rohm Semiconductor SCT3030ARC15		TO-247-4L	TO-247-4	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V	262 W				MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 77.99
		30	$ 68.25
		120	$ 63.37
Newark	Each	1	$ 62.75
		5	$ 62.75
		10	$ 62.75
		25	$ 62.74
		60	$ 62.74

Description

General part information

SCT3030KLHR Series

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.