SCT3030KLHR Series

1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Qualification	Technology
Rohm Semiconductor SCT3030ALGC11	262 W	TO-247N	TO-247-3	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V
Rohm Semiconductor SCT3030AW7TL		TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 nC	5.6 V	70 A	1526 pF	Surface Mount	39 mOhm	N-Channel		175 °C	650 V	267 W
Rohm Semiconductor SCT3030KLGC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF
Rohm Semiconductor SCT3030KLHRC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF	Automotive	AEC-Q101
Rohm Semiconductor SCT3030ARC15		TO-247-4L	TO-247-4	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V	262 W				MOSFET (Metal Oxide)

Catalog

1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant, Qualified to AEC-Q101

Description

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.