SCT3030AW7TL

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Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 650 V, 0.03 OHM, TO-263 (D2PAK)

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DocumentsTechnical Data Sheet EN Importance of Probe Calibration When Measuring Power: Deskew +46

SCT3030AW7TL

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 650 V, 0.03 OHM, TO-263 (D2PAK)

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Importance of Probe Calibration When Measuring Power: Deskew +46

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3030AW7TL

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	104 nC
Input Capacitance (Ciss) (Max) @ Vds	1526 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]	267 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	5.6 V

SCT3030KLHR Series

1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Qualification	Technology
Rohm Semiconductor SCT3030ALGC11	262 W	TO-247N	TO-247-3	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V
Rohm Semiconductor SCT3030AW7TL		TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 nC	5.6 V	70 A	1526 pF	Surface Mount	39 mOhm	N-Channel		175 °C	650 V	267 W
Rohm Semiconductor SCT3030KLGC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF
Rohm Semiconductor SCT3030KLHRC11		TO-247N	TO-247-3	131 nC	5.6 V	72 A		Through Hole	39 mOhm	N-Channel	18 V	175 °C	1200 V	339 W	2222 pF	Automotive	AEC-Q101
Rohm Semiconductor SCT3030ARC15		TO-247-4L	TO-247-4	104 nC	5.6 V	70 A	1526 pF	Through Hole	39 mOhm	N-Channel	18 V	175 °C	650 V	262 W				MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 37.07
		10	$ 27.51
		100	$ 24.42
	Digi-Reel®	1	$ 38.08
		10	$ 33.84
		100	$ 29.60
	Tape & Reel (TR)	1000	$ 24.42
Newark	Each	1	$ 32.61
		5	$ 29.47
		10	$ 26.79
		25	$ 26.30
		50	$ 26.29
		100	$ 25.40
		250	$ 25.39

Description

General part information

SCT3030KLHR Series

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.