G3R160MT17D

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GeneSiC Semiconductor

SIC MOSFET N-CH 21A TO247-3

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GeneSiC Semiconductor

SIC MOSFET N-CH 21A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	G3R160MT17D

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1272 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	175 W
Rds On (Max) @ Id, Vgs [Max]	208 mOhm
Supplier Device Package	TO-247-3
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.7 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
GeneSiC Semiconductor G3R160MT12D	22 A	15 V	TO-247-3	2.69 V	-55 °C	175 ░C	N-Channel	TO-247-3	15 V	123 W	730 pF	Through Hole	28 nC	192 mOhm	1200 V
GeneSiC Semiconductor G3R160MT17D	21 A	15 V	TO-247-3	2.7 V	-55 °C	175 ░C	N-Channel	TO-247-3	15 V	175 W		Through Hole	51 nC		1700 V	208 mOhm	1272 pF
GeneSiC Semiconductor G3R160MT12J	19 A	15 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	2.7 V	-55 °C	175 ░C	N-Channel	TO-263-7		128 W	724 pF	Surface Mount	23 nC		1200 V	208 mOhm		20 V	-10 V
GeneSiC Semiconductor G3R160MT17J	18 A	15 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	2.7 V	-55 °C	175 ░C	N-Channel	TO-263-7	15 V		854 pF	Surface Mount		224 mOhm	1700 V					187 W	29 nC

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General part information

N-Channel 1700 V 21A (Tc) 175W (Tc) Through Hole TO-247-3

Technical documentation and resources