Zenode.ai Logo
Beta
K
G3R160MT12J - GA20JT12-263

G3R160MT12J

Active
GeneSiC Semiconductor

SIC MOSFET N-CH 19A TO263-7

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
G3R160MT12J - GA20JT12-263

G3R160MT12J

Active
GeneSiC Semiconductor

SIC MOSFET N-CH 19A TO263-7

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationG3R160MT12J
Current - Continuous Drain (Id) @ 25°C19 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]23 nC
Input Capacitance (Ciss) (Max) @ Vds724 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]128 W
Rds On (Max) @ Id, Vgs [Max]208 mOhm
Supplier Device PackageTO-263-7
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.26

Description

General part information

G3R160 Series

N-Channel 1200 V 19A (Tc) 128W (Tc) Surface Mount TO-263-7

Documents

Technical documentation and resources