
G3R160MT12J
ActiveGeneSiC Semiconductor
SIC MOSFET N-CH 19A TO263-7
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G3R160MT12J
ActiveGeneSiC Semiconductor
SIC MOSFET N-CH 19A TO263-7
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | G3R160MT12J |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 724 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) [Max] | 128 W |
| Rds On (Max) @ Id, Vgs [Max] | 208 mOhm |
| Supplier Device Package | TO-263-7 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 7.26 | |
Description
General part information
G3R160 Series
N-Channel 1200 V 19A (Tc) 128W (Tc) Surface Mount TO-263-7
Documents
Technical documentation and resources