
G3R160MT12D
ActiveGeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3
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G3R160MT12D
ActiveGeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | G3R160MT12D |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 123 W |
| Rds On (Max) @ Id, Vgs | 192 mOhm |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 2.69 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.52 | |
| 10 | $ 5.85 | |||
| 25 | $ 5.60 | |||
| 100 | $ 5.24 | |||
| 250 | $ 5.02 | |||
| 500 | $ 4.85 | |||
| 1000 | $ 4.70 | |||
Description
General part information
G3R160 Series
N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3
Documents
Technical documentation and resources