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G3R160MT12D - TO-247-3

G3R160MT12D

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GeneSiC Semiconductor

SIC MOSFET N-CH 22A TO247-3

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G3R160MT12D - TO-247-3

G3R160MT12D

Active
GeneSiC Semiconductor

SIC MOSFET N-CH 22A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationG3R160MT12D
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Input Capacitance (Ciss) (Max) @ Vds730 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]123 W
Rds On (Max) @ Id, Vgs192 mOhm
Supplier Device PackageTO-247-3
Vgs (Max)15 V
Vgs(th) (Max) @ Id2.69 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.52
10$ 5.85
25$ 5.60
100$ 5.24
250$ 5.02
500$ 4.85
1000$ 4.70

Description

General part information

G3R160 Series

N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3

Documents

Technical documentation and resources