SCT3120AW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-263 (D2PAK)
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SCT3120AW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3120AW7TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) [Max] | 100 W |
| Rds On (Max) @ Id, Vgs | 156 mOhm |
| Supplier Device Package | TO-263-7 |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
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Description
General part information
SCT3120AW7 Series
SCT3120AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources