SCT3120AW7 Series

650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Rohm Semiconductor SCT3120AW7TL	100 W	156 mOhm	38 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	TO-263-7	460 pF	5.6 V	N-Channel	21 A	650 V	175 °C
Rohm Semiconductor SCT3120ALGC11		156 mOhm	38 nC	TO-247-3	Through Hole	TO-247N	460 pF	5.6 V	N-Channel	21 A	650 V	175 °C	18 V	103 W

650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

SCT3120AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.