SCT3120ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-247N
Deep-Dive with AI
Search across all available documentation for this part.
SCT3120ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-247N
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3120ALGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 103 W |
| Rds On (Max) @ Id, Vgs | 156 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3120AW7 Series
SCT3120AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources