RS1E350BNTB

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HSOP-8

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HSOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	RS1E350BNTB

Current - Continuous Drain (Id) @ 25°C	80 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds	7900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W, 35 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch 30V 24A Middle Power MOSFET

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RS1E281BNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V	94 nC	5100 pF	3 W	2.3 mOhm	Surface Mount	28 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP
Rohm Semiconductor RS1E180BNTB	150 °C	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	46 nC				Surface Mount	60 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	CPT3	4.9 mOhm	3 W 25 W	2400 pF
Rohm Semiconductor RS1E350BNTB	150 °C	4.5 V 10 V	8-PowerTDFN	20 V				1.7 mOhm	Surface Mount	35 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 35 W	7900 pF	185 nC
Rohm Semiconductor RS1E321GNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V	42.8 nC		3 W		Surface Mount	32 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP			2850 pF
Rohm Semiconductor RS1E350BNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V				1.7 mOhm	Surface Mount	35 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 35 W	7900 pF	185 nC
Rohm Semiconductor RS1E240BNTB	150 °C	4.5 V 10 V	8-PowerTDFN	20 V		3900 pF		3.2 mOhm	Surface Mount	24 A 40 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 30 W		70 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.