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RS1E180BNTB - Product schematic image

RS1E180BNTB

Active
Rohm Semiconductor

MOSFET N-CHANNEL 30V 60A 8-HSOP

RS1E180BNTB - Product schematic image

RS1E180BNTB

Active
Rohm Semiconductor

MOSFET N-CHANNEL 30V 60A 8-HSOP

Technical Specifications

Parameters and characteristics for this part

SpecificationRS1E180BNTB
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds2400 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)25 W, 3 W
Rds On (Max) @ Id, Vgs [Max]4.9 mOhm
Supplier Device PackageCPT3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Digi-Reel® 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Tape & Reel (TR) 2500$ 0.18

Description

General part information

RS1E240BN Series

RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.

Documents

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What Is Thermal Design

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Datasheet