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RS1E281BNTB1 - HSOP8

RS1E281BNTB1

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

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DocumentsInner Structure About Export Regulations +27

RS1E281BNTB1 - HSOP8

RS1E281BNTB1

Active

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

DocumentsInner Structure About Export Regulations +27

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RS1E281BNTB1

Current - Continuous Drain (Id) @ 25°C	80 A, 28 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.68
		10	$ 1.73
		100	$ 1.19
		500	$ 0.96
		1000	$ 0.88
	Digi-Reel®	1	$ 1.86
		10	$ 1.54
		100	$ 1.23
		500	$ 1.04
		1000	$ 0.88
	Tape & Reel (TR)	2500	$ 0.78

Description

General part information

RS1E240BN Series

RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.

Documents

Technical documentation and resources

Inner Structure

Package Information

About Export Regulations

Export Information

Measurement Method and Usage of Thermal Resistance RthJC

HSOP8(TB1) Dimension

Package Information

HSOP8(TB1) Taping Information

Package Information

Part Explanation

Application Note

RS1E281BN ESD Data

Characteristics Data

HSOP8(TB1) Explanation for Marking

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

List of Transistor Package Thermal Resistance

How to Create Symbols for PSpice Models

Taping Information

Package Information

Moisture Sensitivity Level - Transistors

Package Information

Notes for Temperature Measurement Using Thermocouples

RS1E281BN Data Sheet

PCB Layout Thermal Design Guide

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

What is a Thermal Model? (Transistor)

What Is Thermal Design

Types and Features of Transistors

Application Note

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Report of SVHC under REACH Regulation

Environmental Data

RS1E240BN Series

Nch 30V 24A Middle Power MOSFET

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RS1E281BNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V	94 nC	5100 pF	3 W	2.3 mOhm	Surface Mount	28 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP
Rohm Semiconductor RS1E180BNTB	150 °C	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	46 nC				Surface Mount	60 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	CPT3	4.9 mOhm	3 W 25 W	2400 pF
Rohm Semiconductor RS1E350BNTB	150 °C	4.5 V 10 V	8-PowerTDFN	20 V				1.7 mOhm	Surface Mount	35 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 35 W	7900 pF	185 nC
Rohm Semiconductor RS1E321GNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V	42.8 nC		3 W		Surface Mount	32 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP			2850 pF
Rohm Semiconductor RS1E350BNTB1	150 °C	4.5 V 10 V	8-PowerTDFN	20 V				1.7 mOhm	Surface Mount	35 A 80 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 35 W	7900 pF	185 nC
Rohm Semiconductor RS1E240BNTB	150 °C	4.5 V 10 V	8-PowerTDFN	20 V		3900 pF		3.2 mOhm	Surface Mount	24 A 40 A	N-Channel	30 V	2.5 V	MOSFET (Metal Oxide)	8-HSOP		3 W 30 W		70 nC